ステップフリー基板作製を目指したメサ型パターン上のGe薄膜成長(半導体薄膜・表面)

抄録

Ge layer was grown on mesa pattern substrate by LPE . By supercooled growth with low supersaturation, the nucleation density was drastically reduced and flat face with few steps was obtained on the upper surface of some mesas.