抄録
6-inch semi-insulating InP single crystals have been grown by the Hot Wall (HW-) LEC method. The crystal weight was 18kg, and the current dislocation density was around 8x104cm^<-2>. The HW-LEC method has advantage to stabilize the growth condition to maintain the productivity of conventional LEC method. The wafer processes for 4-inch InP substrate production were applied and optimized for 6-inch substrate. The typical total thickness variation (TTV) was about 2 micrometer.
