日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
LEC法による直径200mm GaAs単結晶(バルク成長シンポジウム)
和地 三千則小又 慎史稲田 知己矢吹 伸司
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ジャーナル フリー

2003 年 30 巻 3 号 p. 88-

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抄録
200mm diameter GaAs single crystals with 200mm length have been successfully grown based on the multi-heating System technology. Dislocations generated at the shoulder portion,which has been revealed as a new problem,has been reduced by eliminating facetten area as well as accumulated dislocation at the edge of the body portion.
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© 2003 日本結晶成長学会
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