In the growth from a melt of such mixed crystals as In_xGa_<1-x>As and Si_<1-x>Ge_x, crystal growth goes on due to supersaturation caused by the mass transport even if heat reduction from the interface is insufficient. This growth mode can be distinguished from the supercooling induced growth in such crystals as Si, GaAs InP and so on. We have succeeded in producing two growth modes in the growth of In_xGa_<1-x>As and compared them from the view point of single crystallization. As a result, single crystals can be grown more easily in the supercooling induced growth mode. Here, we report such experimental results and we discuss the effect of local solute inhomogeneous distribution on the polycrystallization.
