抄録
Reentrant RHEED intensity oscillation (RO) observed during low temperature MBE growth of GaAs has been explored by RHEED rocking curves observation during growth. Time evolution of surface coverage obtained based on dynamical diffraction calculation reveals that the origin of dumped-RO around 400℃ is due to rapid roughening, which takes place within first monolayer growth on C(4x4) surfaces.
