抄録
Low temperature growth of 3C-SiC has been studied by LPCVD. At 720-760℃ it was grown from MMS (monomethylsilane) on Si (111) 4° off substrate, which was heated by direct current. 10^<-8> Torr of MMS was introduced in a chamber with a pressure of 10^<-8> Torr through a gas cracking furnace. At the substrate temperature of 760℃ high crystallinity was reached.
