抄録
Transparent conductive β-Ga_2O_3 single crystals with 30mm in diameter have been grown by the FZ technique. GaN-system epitaxial films have been deposited by the MOCVD technique on cut and polished β-Ga_2O_3 single crystal wafers. Preliminary GaN-system/β-Ga_2O_3 LEDs with vertical current flow emitted blue light.
