抄録
Preparation of indium nitride has been examined by means of an atmospheric pressure halide chemical vapor deposition technique utilizing a reaction of gaseous InCl_3 and NH_3. From the SEM observations of the crystals deposited onto a Si(100) substrate it was found that they showed flower-like structure, and that each of the flowers has six petals and a style at 823K. It has high symmetry, and possesses a six-fold axis along the style. It was amazing that the crystals constituting a flower have lovely geometry of staggered hexagonal bi-pyramid.
