Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Growth of Large GaN Single Crystals with Low Dislocation Density Using the Liquid Phase Epitaxy Technique(<Special Issue>Bulk Crystals for Substrates)
Fumio KawamuraMinoru KawaharaMasanori MorishitaHidekazu UmedaYuji YamadaRyohei GejoMasashi YoshimuraYusuke MoriTakatomo Sasaki
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2005 Volume 32 Issue 1 Pages 3-9

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Abstract
The growth of large size GaN single crystals with low dislocation density was succeeded by applying the Liquid Phase Epitaxy (LPE) technique and some improvements for the Na flux methods. We examined the conditions at which GaN are grown in the Na flux and found that Na promotes the solubility of nitrogen against the Ga-Na melt due to strong power to reduce the nitrogen states. We review our attempts for the growth of large GaN single crystals and understanding growth mechanism in the alkali-based flux system.
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© 2005 The Japanese Association for Crystal Growth
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