Abstract
The results of GaN formation on the surface of β-Ga_2O_3 single crystalline by nitridation is shown for the application of the substrates of the nitride semiconductors. β-Ga_2O_3 single crystalline was prepared by floating zone method, and its polished (100) plane was nitrided in NH_3 gas at 850℃ for 5 hours. It was demonstrated that polycrystal GaN with hexagonal structure was produced in the surface of β-Ga_2O_3, and the thickness of layers was approximately 50nm. High resolution TEM observation indicated that the synthesized GaN was composed of the aggregation with GaN particles, whose sizes range from 〜5nm to 〜50nm, and a GaN particle consists of defect free single crystalline. This method could be expected as a new route to prepare the bulk GaN substrate.
