Abstract
Bulk Crystal growth of ZnO by hydrothermal method is introduced and its application to GaN crystal growth (ammonothermal method) is also presented with a primitive growth results. 2 inch ZnO single crystal was grown by Tokyo Denpa Co. Ltd. FWHM of X-ray rocking curve of this sample gives 19 second, which suggests its high crystallinity. This is due to the feature of the solvothermal method. As it is performed under moderate temperature region, the moderate thermal condition gives less thermal stress toward the grown crystal. These results motivate us to establish the growth system of GaN by ammonothermal method.
