抄録
Low and high bright discharge modes of a nitrogen radical source were investigated for MEE (migration enhanced epitaxy) method of RF-MBE. The low bright (LB) mode and the high bright (HB) mode are the E mode discharge of capacitive coupling and the high- density H mode discharge of inductive coupling, respectively. The mode transition between LB and HB is applicable to MEE method of RF-MBE.
