2012 年 39 巻 3 号 p. 110-115
Global axisymmetric and local 3D calculations have been performed for obtaining the melt convection and temperature field in Czochralski environment for growing silicon crystals. The influence of a travelling magnet field (TMF) on the melt flow is discussed with respect to the occurence of {110} facets during growth experiments in a TMF travelling down in the side heaters.