Abstract
Diamond semiconductor is the most suitable for power device application. However there are still some crystal-growth issues to be solved, such as donor or acceptor impurities, wide defect-free and hillock-free wafer single crystals. The mechanisms of defect and hillock formation and of surface migration of species are not clear yet. However, recently the high hole concentration and stabilization of hole channel have been achieved, and the device performance reached the commercial level.
