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Article type: Cover
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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Article type: Index
2013 Volume 39 Issue 4 Pages
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Article type: Index
2013 Volume 39 Issue 4 Pages
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Article type: Index
2013 Volume 39 Issue 4 Pages
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Article type: Index
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
153-156
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Makoto Kasu, Yoshihiro Kangawa
Article type: Article
2013 Volume 39 Issue 4 Pages
157-
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Makoto Kasu, Kazuyuki Hirama, Hisashi Sato
Article type: Article
2013 Volume 39 Issue 4 Pages
158-163
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Diamond semiconductor is the most suitable for power device application. However there are still some crystal-growth issues to be solved, such as donor or acceptor impurities, wide defect-free and hillock-free wafer single crystals. The mechanisms of defect and hillock formation and of surface migration of species are not clear yet. However, recently the high hole concentration and stabilization of hole channel have been achieved, and the device performance reached the commercial level.
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Hitoshi Sumiya
Article type: Article
2013 Volume 39 Issue 4 Pages
164-169
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Large high-purity (type IIa) diamond crystals up to 12 mm in diameter were grown by the temperature gradient method at high pressure and high temperature, using high-purity Fe-Co solvent, high-purity carbon source and high-crystalline-quality (001)-oriented seed crystals. The large synthetic IIa diamond crystals are characterized by high-crystalline-quality, having very few dislocations or stacking faults. The X-ray projection topograph revealed that the crystals have no crystal defects especially in the (001) growth sectors in the upper part of the crystals grown on seeds. Diamond crystals containing a large defect free area of 5 × 5 mm^2 or more were successfully obtained by controlling the temperature strictly on the low-temperature side in the synthesis region to allow the (001) growth sectors to become dominant.
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Hideaki Yamada
Article type: Article
2013 Volume 39 Issue 4 Pages
170-178
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There are several fundamental and technical issues for realization of industrial use of single-crystal diamond, which has extreme characteristics superior to those of other semiconductor materials, such as Si and SiC. Especially, for production of inch size wafers of single-crystal diamond, it is indispensable to enlarge the size of the seed crystal and establish uniform growth over the large area as well as improvement of the crystal quality. In this paper, present status of the technique to fabricate the wafers and understanding of the growth are summarized.
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Atsuhito Sawabe, Yutaka Ando, Kazuhiro Suzuki, Hideyuki Kodama, Junji ...
Article type: Article
2013 Volume 39 Issue 4 Pages
179-184
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Research and development of heteroepitaxial diamond by patterned nucleation and growth method is reviewed. Development of large size heteroepitaxial diamond substrate more than 10 mm in square fabricated by patterned nucleation and growth method is mentioned. Trials about the creation of novel diamond industries are also briefly described.
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Norio Tokuda, Toshiharu Makino, Takao Inokuma, Satoshi Yamasaki
Article type: Article
2013 Volume 39 Issue 4 Pages
185-189
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We have carried out a control of a growth mode for diamond (111) homoepitaxy by microwave plasma-enhanced chemical vapor deposition. As a result, we realized the diamond lateral growth without two dimensional nucleation on terraces. The step-free diamond (111) surface without any atomic steps on mesa was successfully formed. On the other hand, hillocks were observed on other mesas of the same substrate. The hillock was formed by spiral growth at screw or mixed dislocations.
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Makoto Kasu
Article type: Article
2013 Volume 39 Issue 4 Pages
190-195
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CVD diamonds show some crystal growth phenomena such as abnormal growth, defects, impurity incorporation, and these are critical for device applications. In the review, we investigated these phenomena through etchpits formed by H_2/O_2 plasma treatment, and CL on obliquely-polishedsample surfaces. It is found that abnormal growth crystals in CVD diamond are classified into unepitaxial crystals (UCs), pyramidal hillocks (PHs) and flat-top hillocks (FHs). The PHs and FHs originate from threading dislocations. Unintentional B doping into CVD diamond is that B atoms from a substrate crystal are incorporated through the vapor phase into a CVD diamond crystal.
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Shinya Ohmagari, Kenji Hanada, Yuki Katamune, Tomohiro Yoshida, Tsuyos ...
Article type: Article
2013 Volume 39 Issue 4 Pages
196-203
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This article overviews the formation of ultrananocrystalline diamond (UNCD) by pulsed laser deposition (PLD) and coaxial arc plasma deposition (CAPD), each of which is a kind of physical vapor deposition (PVD). The UNCD formation by these methods need not the pre-treatment of substrates wherein diamond nuclei are seeded using diamond powder, which is a distinctive difference from that by CVD. From the observation of plasma process by optical emission spectroscopy and the structural evaluation of films for the preparation conditions, we have found the followings: 1) a supersaturated condition comprising highly energetic C^+ ions should have an important role in the nucleation of UNCD grains, 2) initial growth might be stabilize and facilitated by the hydrogen termination of surface dangling bonds, 3) grain is enlarged by boron-incorporation, which is consistent with the prediction of a defect-induced diamond growth model.
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Yukako KATO, Hitoshi UMEZAWA, Shin-ichi SHIKATA
Article type: Article
2013 Volume 39 Issue 4 Pages
204-209
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X-ray topography is the powerful experimental method for the analysis of dislocations, because it has the wide view and it permits identification of dislocation type. Dislocation type analysis is necessary to discuss the relationship between the device performance and the quality of diamond crystal.
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Shintaro Miyazawa
Article type: Article
2013 Volume 39 Issue 4 Pages
210-212
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Kentaro Kutsukake
Article type: Article
2013 Volume 39 Issue 4 Pages
213-214
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Hiroshi Fujioka, Motoaki Iwaya
Article type: Article
2013 Volume 39 Issue 4 Pages
215-216
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Yuki Araki
Article type: Article
2013 Volume 39 Issue 4 Pages
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Masashi Yoshimura
Article type: Article
2013 Volume 39 Issue 4 Pages
218-219
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[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...
Article type: Article
2013 Volume 39 Issue 4 Pages
220-225
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Masahito Watanabe
Article type: Article
2013 Volume 39 Issue 4 Pages
226-
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
227-248
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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Article type: Appendix
2013 Volume 39 Issue 4 Pages
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