This article describes the edge-defined film-fed growth (EFG) process of β-Ga2O3 bulk crystals. We first describe the conditions of the bulk crystal's growth and the fabrication process of the wafers. Then, we discuss the efforts to control electrical properties, and give some experimental results of residual impurity measurement, intentional doping using Si and Sn for n-type doping and Fe for insulating doping, and the effects of annealing on donor concentration. We also discuss recent findings on β-Ga2O3 bulk crystals' main crystal defects.
