2023 年 50 巻 3 号 論文ID: 50-3-01
Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stability as well as their harmless nature compared to chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, the reliability is low due to a lack of careful observation of their stability at elevated temperatures. Recently, we found a reliable high-ZT thermoelectric oxide, Ba1/3CoO2. The crystal structure and electrical resistivity of the Ba1/3CoO2 epitaxial films were found to be maintained up to 600 °C. The power factor gradually increased to ~1.2 mW m−1 K−2 and the thermal conductivity gradually decreased to ~1.9 W m−1 K−1 with increasing temperature up to 600 °C. Consequently, the ZT reached ~0.55 at 600 °C in air, the highest among oxides and comparable to that of p-type PbTe and p-type SiGe.