抄録
In this review, the preparation and properties of epitaxially grown (001) Si films on sapphire, as applied to high-speed MOS LSI's are presented. Relationships between growth conditions and MOS transistor characteristics are discussed by investigating the effect of crystalline properties on electrical ones in Si films. Emphasis is placed on lattice defects and residual strain which are the most important factors for MOS transistor characteristics. The defects have major influences on carrier mobility, drain leakage current and threshold voltage and the strain on carrier mobility. Early stages of Si film growth are also described, relating with the formation of lattice defects in order to obtain high-quality Si films.
