主催: The Japan Society of Applied Physics
会議名: 20th International Colloquium on Scanning Probe Microscopy
開催地: Okinawa, Japan
開催日: 2012/12/17 - 2012/12/19
The effect of several types of the Ga/Si(111) reconstructed structure, which is used as a template for epitaxial growth, on the growth morphology of GaSb islands have been studied by ultrahigh-vacuum scanning tunneling microscopy and non-contact atomic force microscopy. The polygonal islands are spread over a wide surface area, although the large dome-shaped islands are locally formed on - and -Ga. The growth process is also changed by the types of template Ga/Si(111) surface. It is suggested that initial growth state affects the growth morphology and process of GaSb island.