Photoluminescence enhancement of β-FeSi2 nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates

Yoshihito Maeda; Takahide Tatsumi; Yuya Noguchi; Yuki Kawakubo; Hiroyuki Kobayashi; Kazumasa Narumi; Seiji Sakai

doi:10.56646/jjapcp.3.0_011107

International Conference and Summer School on Advanced Silicide Technology 2014

セッションID: 011107

DOI https://doi.org/10.56646/jjapcp.3.0_011107

会議情報

主催: The Japan Society of Applied Physics

会議名: International Conference and Summer School on Advanced Silicide Technology 2014

開催地: Tokyo, Japan

開催日: 2014/07/19 - 2014/07/21

Light emission and detection materials

Photoluminescence enhancement of β-FeSi₂ nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates

Yoshihito Maeda, Takahide Tatsumi, Yuya Noguchi, Yuki Kawakubo, Hiroyuki Kobayashi, Kazumasa Narumi, Seiji Sakai

著者情報

Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
Takahide Tatsumi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Yuya Noguchi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Yuki Kawakubo
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Hiroyuki Kobayashi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Kazumasa Narumi
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
Seiji Sakai
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan

会議録・要旨集オープンアクセス

詳細

抄録

We have investigated PL behavior of β-FeSi₂ nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates. PL enhancement was observed and PCI-PL measurements revealed that PL enhancement was attributed to a transport process of holes with a larger time constant in Cu-doped n-Si substrate in which an interval trap process is controlled by Cu doping.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）