Enhancement of photoluminescence from Cu-doped β-FeSi2/Si heterostructures

Yoshihito Maeda; Takahide Tatsumi; Yuki Kawakubo; Yuya Noguchi; Kosuke Morita; Hiroyuki Kobayashi; Kazumasa Narumi

doi:10.56646/jjapcp.3.0_011108

International Conference and Summer School on Advanced Silicide Technology 2014

セッションID: 011108

DOI https://doi.org/10.56646/jjapcp.3.0_011108

会議情報

主催: The Japan Society of Applied Physics

会議名: International Conference and Summer School on Advanced Silicide Technology 2014

開催地: Tokyo, Japan

開催日: 2014/07/19 - 2014/07/21

Light emission and detection materials

Enhancement of photoluminescence from Cu-doped β-FeSi₂/Si heterostructures

Yoshihito Maeda, Takahide Tatsumi, Yuki Kawakubo, Yuya Noguchi, Kosuke Morita, Hiroyuki Kobayashi, Kazumasa Narumi

著者情報

Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
Takahide Tatsumi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Yuki Kawakubo
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Yuya Noguchi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Kosuke Morita
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Hiroyuki Kobayashi
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
Kazumasa Narumi
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan

会議録・要旨集オープンアクセス

詳細

抄録

We have investigated photoluminescence (PL) behaviors of the Cu-doped β-FeSi₂ thin film/Si heterostructure. Pronounced enhancement of an intrinsic A band and an impurity-related C band emissions has been observed in all the Cu-doped samples. The photo-carrier injection (PCI)-PL measurements have revealed that the PL enhancement is attributed to dynamic process of migration of holes where a repeated trap process of holes can be controlled by Cu-doping.

責任著者(Corresponding author)

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