Formation and properties of crystalline BaSi₂ thin films obtained by solid phase epitaxy on Si(111)

抄録

Barium disilicide may be considered to be a promising material for solar cells. Thin films of BaSi₂ can be developed in various ways. In this paper, we discuss the properties of a barium silicide film obtained by a solid phase epitaxy. GIXRD method showed the presence of BaSi₂ in the film which was obtained at the temperature T = 600, 750 and T = 800 °C. We hypothesize that the co-precipitation of Ba and Si can solve this problem and find that the increase of the annealing temperature results in better film crystallization (for the selected temperature).