Preferred orientation of BaSi₂ thin films fabricated by thermal evaporation

抄録

Thermal evaporation is a simple and high-speed method to grow a BaSi₂ thin film, which is an emerging candidate for an absorber-layer material of thin-film solar cells. In this study, we have investigated the preferred orientation of BaSi₂ films grown at substrate temperatures of 600–700 °C by thermal evaporation using X-ray diffraction. 2θ–ω scans show that peaks derived from (100) orientation grow steadily with increasing substrate temperature. By X-ray pole figure analysis, the (100)-oriented crystals are proven to be epitaxially grown on Si(100) with two variants. The reason of epitaxial growth is discussed from the epitaxial temperature.