Oxidation resistance of impurity doped Mg2Si grown from the melt

Shu Konno; Tsubasa Otubo; Kohei Nakano; Haruhiko Udono

doi:10.56646/jjapcp.5.0_011301

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

セッションID: 011301

DOI https://doi.org/10.56646/jjapcp.5.0_011301

会議情報

主催: The Japan Society of Applied Physics

会議名: Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

開催地: Fukuoka, Japan

開催日: 2016/07/16 - 2016/07/18

Thermoelectric materials

Oxidation resistance of impurity doped Mg₂Si grown from the melt

Shu Konno, Tsubasa Otubo, Kohei Nakano, Haruhiko Udono

著者情報

会議録・要旨集オープンアクセス

詳細

抄録

We have investigated oxidation resistance of melt grown Mg₂Si crystals doped with Sb or Bi impurity by thermal annealing above 600 °C, large difference of oxidation speed was observed in the Sb-doped, Bi-doped and non-doped Mg₂Si crystals. The sample weight of Bi-doped and non-doped Mg₂Si increased about 128 and 104%, respectively, while that of Sb-doped one unchanged after thermal annealing at 650 °C for 6 h. TG/DTA analysis also revealed the changing of oxidation speed and reaction temperature in the Sb-doped, Bi-doped, and non-doped Mg₂Si crystals. These results indicate that Sb-dopant improves the oxidation resistance whereas Bi-dopant deteriorates the oxidation resistance of Mg₂Si.

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