Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

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Fe₃Si/FeSi₂/Fe₃Si trilayered junctions were fabricated by facing targets direct-current sputtering combined with a mask method, and the spin valve signals of the junctions were studied in the temperature range from 50 to 300 K. Whereas the magnetoresistance ratio of giant magnetoresistance and tunnel magnetoresistance junctions monotonically increases with decreasing temperature, that of our samples has the maximum value around 80 K and decreases with decreasing temperature at lower than 80 K, which might be due to an increase in the electrical conductivity mismatch between the metallic Fe₃Si layers and semiconducting FeSi₂ interlayer in the low temperature range.