Spin-Valve Effects in Fe/N-Doped Carbon/Fe3Si Trilayered Films

Takuya Sakai; Takeru Hamasaki; Kazuki Kudo; Ken-ichiro Sakai; Hiroyuki Deguchi; Tsuyoshi Yoshitake

doi:10.56646/jjapcp.8.0_011202

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

セッションID: 011202

DOI https://doi.org/10.56646/jjapcp.8.0_011202

会議情報

主催: The Japan Society of Applied Physics

会議名: 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

開催地: Miyazaki, Japan

開催日: 2019/07/20 - 2019/07/23

Spintronics materials

Spin-Valve Effects in Fe/N-Doped Carbon/Fe₃Si Trilayered Films

Takuya Sakai, Takeru Hamasaki, Kazuki Kudo, Ken-ichiro Sakai, Hiroyuki Deguchi, Tsuyoshi Yoshitake

著者情報

会議録・要旨集オープンアクセス

詳細

抄録

Fe/nitrogen-doped carbon (50 nm)/Fe₃Si tri-layered films were fabricated on Si(111) substrates by physical vapor deposition with a mask method, and the magnetic and electrical properties were investigated. Spin-valve signals were observed in magnetoresistance curves measured in local structure at not only 5 K but also room temperature. It was demonstrated that spin transport in variable hopping is possible for N-doped carbon.

責任著者(Corresponding author)

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