抄録
Large size single crystals of β-Ga2O3 with 1 inch in diameter have been grown by the floating zone technique. Wafers have been cut and fine polished in the (100), (010) and (001) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of β-Ga2O3 as a substrate for optoelectric devices operating in the visible/near UV and with vertical current flow. Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated on β-Ga2O3 single crystal substrates. High-quality (0001) GaN epi-layers with a narrow bandedge luminescence are obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structures were also successfully grown. The first blue light-emitting diode (LED) on β-Ga2O3 with vertical current injection is demonstrated.
