粉体および粉末冶金
Online ISSN : 1880-9014
Print ISSN : 0532-8799
ISSN-L : 0532-8799
研究論文
半導体機器用Cr – Cu 材ヒートシンクの焼結条件と溶浸性の関係
寺尾 星明小日置 英明太田 裕樹伊藤 孝至金武 直幸
著者情報
ジャーナル オープンアクセス

2013 年 60 巻 8 号 p. 367-372

詳細
抄録
Cr – Cu materials have been developed for heat-sink application using P/M processing: Cr powder is sintered and Cu infiltrated. W – Cu and Mo – Cu materials, with low thermal expansion and high thermal conductivity, have been used for heat-sink application. However parts of these materials are produced using expensive powders. Chromium is also a strong candidate for the heat-sink application, because it is the same 6A group element as W and Mo, its powder price is lower and more stable. Cr – Cu materials have succeeded in substitution for W – Cu and Mo – Cu materials. For the heat-sink application, pore free and inclusion free structure of Cr – Cu infiltrated compact is essential for the ability of the following processes: rolling, pressing and Ni plating, to make heat-sink parts. Carbon and oxygen contents of sintered Cr are found to have an effect on the infiltration ability. For the pore free and inclusion free structure, carbon content and oxygen content of sintered Cr should be lower than 0.01 mass% respectively.
著者関連情報
© 2013一般社団法人粉体粉末冶金協会

本論文はCC BY-NC-NDライセンスによって許諾されています.ライセンスの内容を知りたい方は,https://creativecommons.org/licenses/by-nc-nd/4.0/deed.jaでご確認ください.
https://creativecommons.org/licenses/by-nc-nd/4.0/deed.ja
前の記事 次の記事
feedback
Top