粉体および粉末冶金

研究論文

W₂NiB₂ – Ni 硼化物系サーメットの機械的特性

松岡洋平, 桃沢愛, 藤間卓也, 高木研一

2013 年 60 巻 8 号 p. 349-353
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.349

ジャーナルオープンアクセス

抄録を表示する抄録を非表示にする

W₂NiB₂ – Ni ternary boride cermet was studied for use as wear resistant hard materials. Microstructure configuration and mechanical properties of W₂NiB₂ – Ni ternary boride cermet were investigated, such as transverse rupture strength and Rockwell A hardness in different W/B ratios. The existence of W₂B phase with W/B = 1.05, 1.10 samples leads the microstructure refinement. W₂NiB₂ – Ni ternary boride cermet showed mechanical properties of HRA86.0 in hardness, and 1.48 GPa in transverse rupture strength with W/B = 1.00 sample. W₂NiB₂ – Ni ternary boride cermet needs improve mechanical properties to be an alternative material to wear resistant hard materials such as WC – Co.

抄録全体を表示

PDF形式でダウンロード (1167K)
液相－固相反応法で合成したMg₂Si 系化合物の焼結性と熱電特性に及ぼすMg仕込量とB添加量の影響

富永彰, 伊藤孝至

2013 年 60 巻 8 号 p. 354-359
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.354

ジャーナルオープンアクセス

抄録を表示する抄録を非表示にする

Dimagnesium silicide (Mg₂Si) is a promising n – type thermoelectric compound suitable for thermoelectric power generation using waste heat of intermediate temperature range (600 − 900 K). However, there are two problems in making the Mg₂Si compound. One is difficulty in synthesizing the compound due to ease of Mg evaporation in fusion, resulting in existence of non-reacting Si. Another is difficulty in sintering the synthesized powder. In order to overcome the two problems, we synthesized the Mg₂Si compound on Mg – rich state by the liquid-solid phase reaction and sintered the synthesized powder by the pulse discharge sintering (PDS). The influences of Mg/Si ratio and B addition on the sinterability and the thermoelectric properties of the synthesized Mg₂Si compounds were investigated. The sinterability of the synthesized Mg₂Si compounds were improved by the increase of Mg amount. And, electrical resistivities of sintered samples were decreased by B addition. Therefore, thermoelectric properties were strongly affected by both Mg/Si ratio and B addition. The sample synthesized with feed amount of Mg of 67.00 at% and additive amount of B of 1.0 at% had the maximum dimensionless figure of merit of about 0.39 at 773 K.

抄録全体を表示

PDF形式でダウンロード (1598K)
アルミニウムによるSi – Ge 熱電素子とモリブデン電極の接合

東平　知丈, 藤原伸一, 地主孝広, 石島善三

2013 年 60 巻 8 号 p. 360-366
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.360

ジャーナルオープンアクセス

抄録を表示する抄録を非表示にする

A new method that is low cost and produces highly reliable refractory bonds was developed for bonding Si – Ge thermoelectric devices and Mo electrodes. Aluminum foil was chosen as an alternative material to conventional Ag alloy paste, because of its cost advantages and bonding ability. Good wettability of Al to both the Si – Ge devices and Mo electrodes was achieved at a bonding temperature of 953 K. For 12.5 µm – thick Al foil, almost no degradation of the joint strength occurred after heat treatment at 823 K for 18000 s, because the reaction of the thin Al bonding layer to Si – Ge was completed during the bonding process. Comparable conversion efficiency of Si – Ge device was achieved between Al and Ag paste bonding.

抄録全体を表示

PDF形式でダウンロード (1649K)
半導体機器用Cr – Cu 材ヒートシンクの焼結条件と溶浸性の関係

寺尾星明, 小日置英明, 太田裕樹, 伊藤孝至, 金武直幸

2013 年 60 巻 8 号 p. 367-372
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.367

ジャーナルオープンアクセス

抄録を表示する抄録を非表示にする

Cr – Cu materials have been developed for heat-sink application using P/M processing: Cr powder is sintered and Cu infiltrated. W – Cu and Mo – Cu materials, with low thermal expansion and high thermal conductivity, have been used for heat-sink application. However parts of these materials are produced using expensive powders. Chromium is also a strong candidate for the heat-sink application, because it is the same 6A group element as W and Mo, its powder price is lower and more stable. Cr – Cu materials have succeeded in substitution for W – Cu and Mo – Cu materials. For the heat-sink application, pore free and inclusion free structure of Cr – Cu infiltrated compact is essential for the ability of the following processes: rolling, pressing and Ni plating, to make heat-sink parts. Carbon and oxygen contents of sintered Cr are found to have an effect on the infiltration ability. For the pore free and inclusion free structure, carbon content and oxygen content of sintered Cr should be lower than 0.01 mass% respectively.

抄録全体を表示

PDF形式でダウンロード (1689K)

本会記事

平成25年度秋季大会に向けて

2013 年 60 巻 8 号 p. Pref8_1-
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.Pref8_1

ジャーナルオープンアクセス

PDF形式でダウンロード (928K)
第21回新粉末冶金入門講座

2013 年 60 巻 8 号 p. Mtg8_2-Mtg8_6
発行日: 2013/08/15
公開日: 2013/09/21

DOIhttps://doi.org/10.2497/jjspm.60.Mtg8_2

ジャーナルオープンアクセス

PDF形式でダウンロード (264K)

J-STAGEへの登録はこちら（無料）