抄録
The 750 Å AINx films were deposited on Si (111), glassy carbon and commercial glass by an activated reactive evaporation (ARE) method in a nitrogen atmosphere. The 80 keV N+-implantation was carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+/cm2 at 1×10-6 torr. The composition of the film before N+-implantation was revealed by the Rutherford backscattering (RBS). The results of an Xray Diffraction (XRD) and a measurement of optical transmittance show the changes on crystallinity and optical transmittance of the AINX (x<1) films due to N+-implantation, depending on doses. It is concluded that N-ion implantation in AINx films results in the formation of c-axis oriented AIN films.
