抄録
We report the preparation, structure and electrical properties of LaNiO3-z, PrNiO23-z and LaCuO3-x. Wide range of oxygen deficiency was realized by changing the synthetic oxygen pressure. These systems show metallic conductivity even for the samples having a large amount of oxygen vacancy (Z<0.25). The Seebeck coefficient measurement showed that the dominant carrier in LnNiO3-z system is electron, while hole carrier is dominant in LaCuO3-z system.
