抄録
Bismuth titanate (Bi4Ti3O12) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C6H5)3] or tri-ortho-tolyl-bismuth [Bi(o-Tol)3] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C3H7O)4] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C3H7O)2(DPM)2] as Ti sources. The Bi4Ti3O12 films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire ‹0001› and Bi4Ti3O12‹100› was observed for the Bi4Ti3O12 films prepared at 850°C.
