抄録
Reactive sputtering using an Electron-Cyclotron-Resonance microwave plasma was introduced to prepare Co containing ferrite thin-film media at substrate temperatures lower than 150°C without post oxidation process. The ferrite thin-films deposited on glass substrate had a perpendicular magnetic anisotropy, high coercivity of about 240 kA/m and very smooth surface. The ferrite thin-film media annealed in magnetic field showed a large perpendicular magnetic anisotropy, perpendicular coercivity of 258 kA/m and perpendicular loop with the high squareness of 0.82.
