抄録
Co-containing ferrite thin films were successfully deposited on organic flexible substrates by the reactive sputtering method using-an electron cyclotron resonance microwave plasma at a temperature lower than 150°C. The ferrite thin films had an amorphous-like structure, perpendicular magnetic anisotropy and high perpendicular coercivity of about 170kA/m. The perpendicular coercivity increased with increasing substrate thickness. Inserting SiO2 underlayer between organic flexible substrate and ferrite thin films enhanced the perpendicular coercivity.
