抄録
Ion-implanted tracks with 1.5μm period for 64M bit magnetic bubble memory devices have been fabricated and operated. The bubble material used here is (BiSmLu)3(FeAl)5O12 garnt film supporting 0.45μm bubbles. The resist mask patterns for implantation were formed by a 1/10 reduction projection aligner using rectangular patterns on a reticle. The bubble propagation tracks were fabricated by double deuterium implantation and annealed at 400°C for 30 min with a SiO2 layer deposited on the garnet surface to stabilize the implanted layer. More than 7% operating bias field margin was stably obtained in quasistatic bubble propagation. This shows that the ion-implanted devices have great potential for 64M bit magnetic bubble memory devices.
