スパッタリング法で作製した単結晶パーマロイ膜の構造と結晶磁気異方性

抄録

Single crystal Permalloy films were grown epitaxially on (001) GaAs substrates by sputtering method. The relationship between crystal orientations for Permalloy and GaAs are (001)NiFe//(001) GaAs, <100>NiFe//<110>GaAs. The crystal structures of Permalloy films are deformed from cubic to tetragonal. The films of positive and negative tetragonal strain have small and large unit cell volume, respectively. The films with small lattice constant in the film plane have large strain distribution. The magnetocrystalline anisotropy for the films of large strain distribution is small, and that for films of negative tetragonal strain is large.