抄録
The thermal relaxation of the field induced anisotropy in Co-Nb-Zr-N microcrystalline thin films with 9 at.% nitrogen contents, deposited by ion beam sputtering in Ar + N2 atmosphere , has been studied. The uniaxial anisotropy energy KUX up to 1000 J/m3 was induced by preannealing treatment at 600 °C for 1 hour. Reversible relaxations of the induced anisotropy by Δ KUX = 700∼1500 J/m3 were found. As a result of investigating dependences of the anisotropy on annealing temperature TRA and annealing time tRA , it was found that the relaxation process did not exhibit a simple dependence on log tRA.
