薄膜
低運動エネルギースパッタ法によるFe単結晶膜
1992 年 16 巻 2 号 p. 231-234
詳細
1992 年 16 巻 2 号 p. 231-234
Gas-flow-sputtering (GFS) method, in which atoms having very low kinetic energies (<0.1 eV) are deposited, was studied to grow single crystal α-Fe films on MgO(001). These films were characterized by reflection high-energy electron diffraction, X-ray diffraction and Kerr-effect magnetometry. The results suggested that single crystal Fe films were deposited at a substrate temperature of about 400°C, a growth rate of 1100Å/min and a pressure of 1 Torr.
