抄録
The relationship between the structure and magnetic properties of FeN films and the deposition conditions in ion beam sputtering with nitrogen bombardment was systematically investigated. The films were deposited on glass substrates at an ion beam acceleration voltage Vs of 1200 V and at a nitrogen bombardment voltage VA in the range of 80-2000 V, with the ratio of the arrival rates besed on the nitrogen current density. The ratios of iron to nitrogen were 10 to 1 (RA of 0.1) and 20 to 1 (RA of 0.05). The concentrate ion of nitrogen in the films could be controlled by RA. The vaules for RA of 0.1 and 0.05 were 9-13 at% and 5-10%, respectively. Pure Fe films with 4πMs larger than 21.5 kG of a pure Fe were deposited at VA in the range of 800-200 V for RA of 0.1. Hc increased with increasing bombardment energy.
