日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
センサ
C-MOS IC とアモルファスワイヤによる MI センサ
菅野 崇樹毛利 佳年雄
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ジャーナル オープンアクセス

1997 年 21 巻 4_2 号 p. 645-648

詳細
抄録
This paper presents new micromagnetic sensors with high sensitivity and stability and low power consumption using an amorphous wire MI head and a C-MOS inverter IC. The sensors employ the pulse response MI effect. The basic properties of the pulse response MI effect in amorphous wire ( (Fe0.06Co0.94)72.5Si12.5B15) and two kind of sensor circuits are reported. The impedance in the MI head is sensitively changed to more than 80%/Oe owing to a sharp current magnetization. The sensor circuits operate with a high stability because of a current-source-like operation in the C-MOS IC, and the independence of the field detection sensitivity with respect to the oscillation frequency of the multivibrator. The power consumption in the sensor circuit is less than 0.5 mW.
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© 1997 (社)日本応用磁気学会
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