日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
巨大磁気抵抗効果・トンネル磁気抵抗効果(GMR・TMR)
清浄雰囲気中で作製したNi-Fe/Cu多層スパッタ膜の構造とGMR効果
角田 匡清宮田 俊継三浦 聡高橋 研
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ジャーナル オープンアクセス

1998 年 22 巻 4_2 号 p. 545-548

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抄録
The relation between the dry-etching time of the substrate and the magnetoresistance (MR) is discussed for Ni-Fe/Cu multilayers fabricated by a facing-targets sputtering method. The role of the underlying, Ta, Fe, Ni-Fe, or Ni-Fe fabricated in an N2 mixed sputtering atmosphere (Ni-Fe (N2)), is also discussed from the viewpoint of the relation between the microstructure and the GMR properties. Dry etching of the substrate surface with RF plasma before film deposition results in a remarkable increase in the MR ratio. An underlying 30-Å-thick Ta layer increased the MR ratio, while a 5-Å-thick Ni-Fe (N2) underlayer decreased it From an analysis of the structure and magnetic properties of the multilayers, it is concluded that enlargement of the grain diameter in the multilayers led to an enhancement of the interlayer magnetic coupling, and resulted in the remarkable increase in the MR ratio
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© 1998 (社)日本応用磁気学会
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