1998 年 22 巻 S_1_ISFA_97 号 p. S1_132-134
Co-doped Bi3Fe5O12 garnet films were prepared using two targets (TA = 3Bi2O3-5Fe2O3 and TB = CoFe2O4 or Co metal) by means of reactive alternating ion beam sputtering technique. Co spinel ferrite phase was also observed by X ray diffraction measurement (XRD), even when garnet phase mainly grows. The saturation magnetization showed a peak for the sputtering time ratio R. The coercive force of the films monotonously increased with decrease of R. The films also showed irregular Faraday rotation and magnetization hysteresis loops. The films deposited using CoFe2O4 as Co source formed G phase in the wider range than those deposited using Co metal of CoO. From these phenomena, it turned out that Co ion exists as Co spinel ferrite particles scattered in Bi3Fe5O12 films independent of Co source materials.