磁気光学
非晶質TbFe膜を用いた干渉層構造の光熱磁気記録再生特性
1983 年 7 巻 2 号 p. 111-114
詳細
1983 年 7 巻 2 号 p. 111-114
Amorphous TbFe films have been prepared by EB evaporation technique on glass substrates. After preparing TbFe films of about 220 Å in thickness, SiOx and the reflective layer (for example Au, Ag) were deposited without breaking vacuum.
The reflectivity, the minimum writing laser power and effective Kerr rotation angle of this structure were measured as a function of SiOx film thickness and compared with the respective values of a film without reflective layer. The thickness of TbFe and SiOx layers for minimum writing laser power and maximum effective Kerr rotation angle was determined. Using this optimum structure, a carrier-to-noise ratio (C/N) of 44 dB at 2.048 Mb/s (NRZ) was obtained, which is a few dB larger than that of TbFe mono-layer films.
