Hydrogenic Impurity States in n-Doped and Undoped Quantum Wells of GaAs--Al_xGa_1-xAs Embedded in Intense Laser Fields

抄録

The ground state binding energy of hydrogenic impurities in n-doped and undoped GaAs--Al_xGa_1-xAs quantum wells, under intense high-frequency polarized laser field is investigated. The calculation has been performed by means of a nonperturbative theory and variational approach which takes into account the “dressed” confinement barrier potential, the “dressed” Coulomb potential, and the screening effect due to the two-dimensional electron gas. We found that the impurity binding energy in a n-doped quantum well is dramatically reduced by both, the screening effect and the intense high-frequency laser field, thus leading, under certain circumstances, to a metal-insulator transition.