Thermal Expansion and de Haas-van Alphen Effect of CeRh_2Si_2

Shingo Araki; Akira Misawa; Rikio Settai; Tetsuya Takeuchi; Yoshichika Onuki

doi:10.1143/jpsj.67.2915

Shingo Araki, Akira Misawa, Rikio Settai, Tetsuya Takeuchi, Yoshichika Onuki

著者情報

キーワード: CeRh₂Si₂, single crystal, thermal expansion coefficient, de Haas-van Alphen effect

ジャーナル認証あり

1998 年 67 巻 8 号 p. 2915-2918

DOI https://doi.org/10.1143/jpsj.67.2915

詳細

抄録

We have grown single crystals of CeRh₂Si₂ and LaRh₂Si₂, and measured the temperature dependence of the thermal expansion coefficient.The magnetic component of the thermal coefficient in CeRh₂Si₂ hasbeen analyzed on the basis of the crystalline electric field.We have also succeeded in observing the de Haas-van Alphen (dHvA) effect ofCeRh₂Si₂.The detected dHvA branches are small in cross-section and are observed in anarrow angle region centered at the symmetrical axis, reflecting themultiply-connected Fermi surface.

責任著者(Corresponding author)

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