抄録
The effect of pressure and magnetic field on the temperature dependent electrical resistivity ρ(T) of the [Co(1.02 nm)/Cu(tCu nm)]25 magnetic multilayers (MML) with tCu=0.76 [ferromagnetic (F)] and 1.05 [antiferromagnetic (AF)] has been investigated at low temperature. MR ratio Δρ⁄ρs for tCu=1.05 and 0.76 decreases with increasing pressure. The pressure dependent Δρ⁄ρs for tCu=1.05 is more significant than that for 0.76. ρ(T) at H=0 and above saturation field Hs (H=2 T) for Co/Cu MMLs is found to show T2-dependence in the relatively wide temperature range, 4.2≤T≤20 K, at low temperature. The coefficient of T2 term (=A) for F-state is larger than that for AF-state at ambient pressure. The change of A for tCu=1.05 at H=0 is smaller than that at H=2 T. These results are discussed on the basis of the electron scattering at interfaces due to magnons or spin-wave.
