Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Magnetic and Electrical Properties in CePtSi3 without Inversion Symmetry in the Crystal Structure
Tomoya KawaiYusuke OkudaHiroaki ShishidoArumugam ThamizhavelTatsuma D. MatsudaYoshinori HagaMiho NakashimaTetsuya TakeuchiMasato HedoYoshiya UwatokoRikio SettaiYoshichika Onuki
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2007 年 76 巻 1 号 p. 014710

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We succeeded in growing a single crystal of CePtSi3 with the tetragonal BaNiSn3-type crystal structure by the Sn-flux method. CePtSi3 is found to be an antiferromagnet with successive two transitions at TN1=4.8 K and TN2=2.4 K. The magnetization for H||[100] indicates two metamagnetic transitions at Hc1=1.8 kOe and Hc2=15 kOe and saturates above Hs=45 kOe, with an ordered moment of 1.15 μB/Ce. The [100] direction is an easy-axis in magnetization, while the [001] direction corresponds to a hard-axis. The anisotropy of the magnetic susceptibility and magnetization is very similar to that of pressure-induced superconductors of CeRhSi3 and CeIrSi3, which is commonly ascribed to the crystalline electric field effect.
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© The Physical Society of Japan 2007
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