Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Fano Effect in a Few-Electron Quantum Dot
Tomohiro OtsukaEisuke AbeShingo KatsumotoYasuhiro IyeGyong L. KhymKicheon Kang
著者情報
ジャーナル 認証あり

2007 年 76 巻 8 号 p. 084706

詳細
抄録
We have studied the Fano effect in a few-electron quantum dot side-coupled to a quantum wire. The conductance of the wire, which shows an ordinal staircase-like quantization without the dot, is modified through the interference (the Fano effect) and the charging effects. These effects are utilized to verify the exhaustion of electrons in the dot. The “addition energy spectrum” of the dot shows a shell structure, indicating that the electron confinement potential is fairly circular. A rapid sign inversion of the Fano parameter on the first conductance plateau with the change of the wire gate voltage has been observed, and explained by introducing a finite width of dot–wire coupling.
著者関連情報

この記事は最新の被引用情報を取得できません。

© The Physical Society of Japan 2007
前の記事 次の記事
feedback
Top