Magneto-plasma Resonance in Semiconductors (I)

抄録

Theory of the magneto-plasma resonance in semiconductors is developed for the general case where several kinds of free carriers are moving under a static magnetic field. The absorption and dispersion relations are obtained which are applicable to the usual semiconductors such as Si and Ge. It is shown that, under favorable conditions, the resultant plasma frequency can be determined in a way as if there were only one kind of carrier which has the reduced mass of all the carriers concerned. The experimental method to determine the parameter of the magneto-plasma resonance is also discussed.