抄録
Various effects of uniaxial compressive stress on the electron spin resonance lines and related relaxation properties on phosphorus and antimony donors in Ge were investigated at liquid helium temperatures and at X-band. Besides general agreement with Wilson’s data several new results were obtained:
(1) The “one-valley” g-shifts were measured with stress applied along the [001] direction in a sample containing phosphorus of 1×1017/cm3. Two constants of the strain-induced spin Hamiltonian were determined experimentally by the aid of Nakayama’s theory.
(2) The spin-lattice relaxation times Ts were measured on the resolved hyperfine lines of phosphorus of 2×1015/cm3, and a substantial change of T1 with a large [111] stress was observed. Its magnitude was T1=1.1×10−2 sec for the stress of 6×108 dyne·cm−2 in agreement with Nakayama-Hasegawa’s estimation.
(3) The line width was measured as a function of the magnitude of stress, the donor concentration, temperatures, and the orientation of magnetic field. The results are discussed from a point of view of the impurity conduction phenomena.
